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strong ir fet? IRFB7537pbf irfs7537pbf irfsl7537pbf hexfet ? power mosfet d s g application ? ? brushed motor drive applications ? ? bldc motor drive applications ?? battery powered circuits ? ? half-bridge and full-bridge topologies ? ? synchronous rectifier applications ? ? resonant mode power supplies ? ? or-ing and redundant power switches ? ? dc/dc and ac/dc converters ? ? dc/ac inverters benefits ? ? improved gate, avalanche and dynamic dv/dt ruggedness ? ? fully characterized capacitance and avalanche soa ? ? enhanced body diode dv/dt and di/dt capability ? ? lead-free, rohs compliant v dss 60v r ds(on) typ. 2.75m ? ? max 3.30m ? ? i d 173a ? fig 1. typical on-resistance vs. gate voltage fig 2. maximum drain current vs. case temperature to-220ab IRFB7537pbf d 2 pak irfs7537pbf to-262 irfsl7537pbf s d g s d g s d g d g d s gate drain source base part number package type standard pack orderable part number form quantity IRFB7537pbf to-220 tube 50 IRFB7537pbf irfsl7537pbf to-262 tube 50 irfsl7537pbf irfs7537pbf tube 50 irfs7537pbf tape and reel left 800 irfs7537trlpbf d 2 -pak 25 50 75 100 125 150 175 t c , case temperature (c) 0 50 100 150 200 i d , d r a i n c u r r e n t ( a ) 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 0 2 4 6 8 10 12 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 100a t j = 25c t j = 125c 1 www.irf.com ? 2014 international rectifier submit datasheet feedback october 7, 2014 downloaded from: http:///
2 www.irf.com ? 2014 international rectifier submit datasheet feedback october 7, 2014 ? irfb/s/sl7537pbf absolute maximum rating symbol parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 173 a ? i d @ t c = 100c continuous drain current, v gs @ 10v 122 i dm pulsed drain current ?? 700 p d @t c = 25c maximum power dissipation 230 w linear derating factor 1.5 w/c v gs gate-to-source voltage 20 v t j t stg operating junction and storage temperature range -55 to + 175 ? c ? soldering temperature, for 10 seconds (1.6mm from case) 300 mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) ? avalanche characteristics ? e as single pulse avalanche energy ?? 270 mj e as (l=1mh) single pulse avalanche energy ?? 554 i ar avalanche current ? see fig 15, 16, 23a, 23b a e ar repetitive avalanche energy ? mj thermal resistance ? symbol parameter typ. max. units r ? jc junction-to-case ?? CCC 0.65 c/w ? r ? cs case-to-sink, flat greased surface 0.50 CCC r ? ja junction-to-ambient (to-220) ? CCC 62 r ? ja junction-to-ambient (pcb mount) (d 2 -pak) ?? CCC 40 static @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 60 CCC CCC v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 40 CCC mv/c reference to 25c, i d = 1ma ? r ds(on) CCC 2.75 3.30 m ??? v gs = 10v, i d = 100a ? CCC 3.50 CCC v gs = 6.0v, i d = 50a ? v gs(th) gate threshold voltage 2.1 CCC 3.7 v v ds = v gs , i d = 150a i dss drain-to-source leakage current CCC CCC 1.0 a v ds =60 v, v gs = 0v CCC CCC 150 v ds =60v,v gs = 0v,t j =125c i gss gate-to-source forward leakage CCC CCC 100 na v gs = 20v gate-to-source reverse leakage CCC CCC -100 v gs = -20v r g gate resistance CCC 2.0 CCC ?? static drain-to-source on-resistance notes: ?? repetitive rating; pulse width limited by max. junction temperature. ? limited by t jmax , starting t j = 25c, l = 54h, r g = 50 ? , i as = 100a, v gs =10v. ?? i sd ? 100a, di/dt ? 1130a/s, v dd ? v (br)dss , t j ?? 175c. ?? pulse width ? 400s; duty cycle ? 2%. ? c oss eff. (tr) is a fixed capacitance that gives the same c harging time as c oss while v ds is rising from 0 to 80% v dss . ? c oss eff. (er) is a fixed capacitance that gives the same energy as c oss while v ds is rising from 0 to 80% v dss . ? r ? is measured at t j approximately 90c. ?? when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994. : http://www.irf.com/technical-info/appnotes/an-994.pdf ? limited by t jmax , starting t j = 25c, l = 1mh, r g = 50 ? , i as = 33a, v gs =10v. downloaded from: http:///
3 www.irf.com ? 2014 international rectifier submit datasheet feedback october 7, 2014 ? irfb/s/sl7537pbf dynamic electrical characteristics @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions gfs forward transconductance 190 CCC CCC s v ds = 10v, i d =100a q g total gate charge CCC 142 210 i d = 100a q gs gate-to-source charge CCC 36 CCC v ds = 30v q gd gate-to-drain charge CCC 43 CCC v gs = 10v q sync total gate charge sync. (qgC qgd) CCC 99 CCC t d(on) turn-on delay time CCC 15 CCC ns v dd = 30v t r rise time CCC 105 CCC i d = 100a t d(off) turn-off delay time CCC 82 CCC r g = 2.7 ?? t f fall time CCC 84 CCC v gs = 10v ? c iss input capacitance CCC 7020 CCC pf ? v gs = 0v c oss output capacitance CCC 640 CCC v ds = 25v c rss reverse transfer capacitance CCC 395 CCC ? = 1.0mhz, see fig.7 c oss eff.(er) effective output capacitance (energy related) CCC 665 CCC v gs = 0v, vds = 0v to 48v ? c oss eff.(tr) output capacitance (time related) CCC 880 CCC v gs = 0v, vds = 0v to 48v ? diode characteristics ? symbol parameter min. typ. max. units conditions i s continuous source current CCC CCC 173 a mosfet symbol (body diode) showing the i sm pulsed source current CCC CCC 700 integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage CCC CCC 1.2 v t j = 25c,i s = 100a,v gs = 0v ?? dv/dt peak diode recovery dv/dt ?? CCC 10 CCC v/ns t j = 175c,i s =100a,v ds = 60v t rr reverse recovery time CCC 39 CCC ns t j = 25c v dd = 51v CCC 41 CCC t j = 125c i f = 100a, q rr reverse recovery charge CCC 46 CCC nc t j = 25c di/dt = 100a/s ??? CCC 56 CCC t j = 125c ? i rrm reverse recovery current CCC 2.1 CCC a t j = 25c ? nc ? d s g downloaded from: http:///
4 www.irf.com ? 2014 international rectifier submit datasheet feedback october 7, 2014 ? irfb/s/sl7537pbf fig 6. normalized on-resistance vs. temperature fig 5. typical transfer characteristics fig 4. typical output characteristics fig 3. typical output characteristics fig 7. typical capacitance vs. drain-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v ? 60s pulse width tj = 25c 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) ? 60s pulse width tj = 175c 4.5v vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 2 3 4 5 6 7 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 25v ? 60s pulse width -60 -20 20 60 100 140 180 t j , junction temperature (c) 0.4 0.8 1.2 1.6 2.0 2.4 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 100a v gs = 10v 0.1 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 50 100 150 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 48v v ds = 30v vds= 12v i d = 100a fig 8. typical gate charge vs. gate-to-source voltage downloaded from: http:///
5 www.irf.com ? 2014 international rectifier submit datasheet feedback october 7, 2014 ? irfb/s/sl7537pbf fig 10. maximum safe operating area fig 11. drain-to-source breakdown voltage fig 9. typical source-drain diode forward voltage fig 12. typical c oss stored energy fig 13. typical on-resista nce vs. drain current 0.1 0.4 0.7 1.0 1.3 1.6 1.9 2.2 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v -60 -20 20 60 100 140 180 t j , temperature ( c ) 64 66 68 70 72 74 76 78 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) id = 1.0ma 0 1 02 03 04 05 06 0 v ds, drain-to-source voltage (v) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 e n e r g y ( j ) 0.1 1 10 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 10msec 1msec operation in this area limited by r ds (on) 100sec dc 0 50 100 150 200 i d , drain current (a) 2.6 3.1 3.6 4.1 4.6 5.1 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) vgs = 5.5v vgs = 6.0v vgs = 7.0v vgs = 8.0v vgs = 10v downloaded from: http:///
6 www.irf.com ? 2014 international rectifier submit datasheet feedback october 7, 2014 ? irfb/s/sl7537pbf fig 14. maximum effective transient thermal impedance, junction-to-case fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1.avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 23a, 23b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 14, 15). t av = average time in avalanche. d = duty cycle in avalanche = tav f z thjc (d, t av ) = transient thermal resistance, see figures 14) pd (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av ?? 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 50 100 150 200 250 300 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 100a fig 15. avalanche current vs. pulse width 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 150c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse) downloaded from: http:///
7 www.irf.com ? 2014 international rectifier submit datasheet feedback october 7, 2014 ? irfb/s/sl7537pbf fig 21. typical stored charge vs. dif/dt fig 20. typical stored charge vs. dif/dt fig 19. typical recovery current vs. dif/dt fig 18. typical recovery current vs. dif/dt -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) id = 150a id = 250a id = 1.0ma id = 1.0a fig 17. threshold voltage vs. temperature 0 200 400 600 800 1000 di f /dt (a/s) 0 3 6 9 12 i r r m ( a ) i f = 60a v r = 51v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 0 3 6 9 12 15 i r r m ( a ) i f = 100a v r = 51v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 25 50 75 100 125 150 175 200 225 q r r ( n c ) i f = 60a v r = 51v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 25 50 75 100 125 150 175 200 225 q r r ( n c ) i f = 100a v r = 51v t j = 25c t j = 125c downloaded from: http:///
8 www.irf.com ? 2014 international rectifier submit datasheet feedback october 7, 2014 ? irfb/s/sl7537pbf fig 22. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 23a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 24a. switching time test circuit fig 25a. gate charge test circuit t p v (br)dss i as fig 23b. unclamped inductive waveforms fig 24b. switching time waveforms vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 25b. gate charge waveform vdd ? downloaded from: http:///
9 www.irf.com ? 2014 international rectifier submit datasheet feedback october 7, 2014 ? irfb/s/sl7537pbf to-220ab package outline (dimensions are shown in millimeters (inches)) to-220ab part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ in t e r n a t io n a l part number r e c t if ie r lo t c o d e assem bly lo g o year 0 = 2000 date code w eek 19 lin e c lot code 1789 e x a m p l e : t h is is a n ir f 1 0 1 0 n o te : "p " in a s s e m b ly lin e p o s itio n indicates "lead - free" in th e assem bly lin e "c " assem bled o n w w 19, 2000 to-220ab packages are not recommended for surface mount application . downloaded from: http:///
10 www.irf.com ? 2014 international rectifier submit datasheet feedback october 7, 2014 ? irfb/s/sl7537pbf to-262 package outline (dimensions are shown in millimeters (inches) to-262 part marking information logo rectifier international lot code assembly logo rectifier international date code week 19 year 7 = 1997 part number a = assembly site code or product (optional) p = designates lead- free example: this is an irl3103l lot code 1789 assembly part number date code week 19 line c lot code year 7 = 1997 assembled on ww 19, 1997 in the assembly line "c" note: for the most current drawing please refer to ir website at http://www.irf.com/package/ downloaded from: http:///
11 www.irf.com ? 2014 international rectifier submit datasheet feedback october 7, 2014 ? irfb/s/sl7537pbf d 2 pak (to-263ab) package outline (dimensions are shown in millimeters (inches)) d 2 pak (to-263ab) part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ date code year 0 = 2000 week 02 a = assembly site code rectifier international part number p = designates lead - free product (optional) f530s in the assembly line "l" assembled on ww 02, 2000 this is an irf530s with lot code 8024 international logo rectifier lot code assembly year 0 = 2000 part number date code line l week 02 or f530s logo assembly lot code downloaded from: http:///
12 www.irf.com ? 2014 international rectifier submit datasheet feedback october 7, 2014 ? irfb/s/sl7537pbf 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. d 2 pak (to-263ab) tape & reel information (dimensions are shown in millimeters (inches)) note: for the most current drawing please refer to ir website at http://www.irf.com/package/ downloaded from: http:///
13 www.irf.com ? 2014 international rectifier submit datasheet feedback october 7, 2014 ? irfb/s/sl7537pbf ? qualification standards can be found at international rectifiers web site: http://www.irf.com/product-info/reliability/ ?? applicable version of jedec standar d at the time of product release. qualification information ? ? qualification level ? industrial (per jedec jesd47f) ?? moisture sensitivity level to-220 n/a rohs compliant yes d 2 pak msl1 to-262 n/a ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ revision history date comments 10/07/14 ?? updated e as (l =1mh) = 554mj on page 2 ?? updated note 9 limited by t jmax , starting t j = 25c, l = 1mh, r g = 50 ? , i as = 33a, v gs =10v. on page 2 ?? updated package outline on page 9,10,11,12. downloaded from: http:///

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